Description

---

Symposium V, "Rare-Earth Doping of Advanced Materials for Photonic Applications," took place during the 2011 Spring Meeting of the Materials Research Society in San Francisco, California, April 25-29, 2011. It brought together researchers from a number of fields that traditionally do not interact closely with each other and provided the semiconductor, phosphors and device communities with a unique opportunity to discuss fundamental topics of common interest that underlie the emission in rare-earth-doped materials. Such a mix of different research topics, silicon photonics, phosphors, oxides, and wide band gap materials including III-nitride semiconductors, to name a few, greatly promotes a healthy and vigorous exchange of ideas. The goal of this symposium was to highlight the status of light emission at infrared and visible wavelengths from rare-earth-doped phosphors as well as semiconductors. Issues of rare-earth-materials applications for green technologies, sustainability and opportunities for development of multifunctional devices utilizing magnetic, electric and pressure stimuli were also addressed.